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IRFZ48NS Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFZ48NS Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 10 page IRFZ48NS/IRFZ48NL Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 14 m Ω VGS = 10V, ID = 32A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 24 ––– ––– SVDS = 25V, ID = 32A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 81 ID = 32A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 78 ––– ID = 32A td(off) Turn-Off Delay Time ––– 34 ––– RG = 0.85Ω tf Fall Time ––– 50 ––– VGS = 10V, See Fig. 10 nH Between lead, and center of die contact Ciss Input Capacitance ––– 1970 ––– VGS = 0V Coss Output Capacitance ––– 470 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 700
190 mJ IAS = 32A, L = 0.37mH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LS Internal Source Inductance ––– 7.5 ––– IGSS ns IDSS Drain-to-Source Leakage Current S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V trr Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 32A Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 64 210 A Starting T J = 25°C, L = 0.37mH RG = 25Ω, IAS = 32A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 32A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is the destructive value not limited to the thermal limit. This is the thermal limited value. Notes: 2014-8-10 2 www.kersemi.com |
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