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IRFU3411 Datasheet(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRFU3411 Datasheet(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
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4 / 8 page  Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 0 500 1000 1500 2000 2500 3000 V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 20 40 60 80 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 16A V = 20V DS V = 50V DS V = 80V DS 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 TA = 25°C TJ = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec IRFR/U3411PBF 2014-8-15 4 WWW.KERSEMI.COM |
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