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MOS FIELD EFFECT TRANSISTOR

NP80N055EHE, NP80N055KHE

NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D14096EJ7V0DS00 (7th edition)

Date Published October 2007 NS

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2002, 2007

DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP80N055EHE-E1-AY

Note1, 2

NP80N055EHE-E2-AY

Note1, 2

TO-263 (MP-25ZJ) typ. 1.4 g

NP80N055KHE-E1-AY

Note1

NP80N055KHE-E2-AY

Note1

Pure Sn (Tin)

Tape 800 p/reel

TO-263 (MP-25ZK) typ. 1.5 g

NP80N055CHE-S12-AZ

Note1, 2

Sn-Ag-Cu

TO-220 (MP-25) typ. 1.9 g

NP80N055DHE-S12-AY

Note1, 2

TO-262 (MP-25 Fin Cut) typ. 1.8 g

NP80N055MHE-S18-AY

Note1

TO-220 (MP-25K) typ. 1.9 g

NP80N055NHE-S18-AY

Note1

Pure Sn (Tin)

Tube 50 p/tube

TO-262 (MP-25SK) typ. 1.8 g

Notes 1. Pb-free (This product does not contain Pb in the external electrode.)

2. Not for new design

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

• Low input capacitance

• Built-in gate protection diode

(TO-220)

(TO-262)

(TO-263)

<R>