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2SK3365 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3365 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14255EJ4V0DS00 (4th edition) Date Published August 2006 NS CP(K) Printed in Japan 1999 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 m Ω (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 m Ω (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 m Ω (MAX.) (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 1300 pF (TYP.) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±30 A Drain Current (Pulse) Note ID(pulse) ±120 A Total Power Dissipation (TC = 25 °C) PT 36 W Total Power Dissipation (TA = 25 °C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Note PW ≤ 10 μs, Duty cycle ≤ 1% THERMAL RESISTANCE Channel to case Thermal Resistance Rth(ch-C) 3.48 °C/W Channel to ambient Thermal Resistance Rth(ch-A) 125 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3365 TO-251 (MP-3) 2SK3365-Z TO-252 (MP-3Z) |
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Similar Description - 2SK3365_15 |
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