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2SK3365 Datasheet(PDF) 8 Page - Renesas Technology Corp |
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2SK3365 Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 9 page Data Sheet D14255EJ4V0DS 6 2SK3365 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2 13 6.5±0.2 5.0±0.2 4 2.3 2.3 0.5±0.1 2.3±0.2 1.1±0.2 0.5-0.1 +0.2 0.5-0.1 +0.2 <R> 2) TO-252 (MP-3Z) 12 3 4 6.5 ±0.2 4.4 ±0.2 5.0 ±0.2 0.5 ±0.1 0.5 ±0.1 2.3 ±0.2 0.5 ±0.1 Note Note 0.15 ±0.15 2.3 ±0.3 2.3 ±0.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Note The depth of notch at the top of the fin is from 0 to 0.2 mm. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
Similar Part No. - 2SK3365_15 |
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Similar Description - 2SK3365_15 |
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