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PZT159 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT159 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual PZT159 PNP Silicon Planar RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente Features * 5 Amps continuous current, up to 15 Amp peak current. * Excellent gain characteristic specified up to 10Amps. * Very low saturation voltage Mechanical Data Case: SOT-223 Plastic Package Weight: approx. 0.021g Marking Code: 159 01-Jun-2002 Rev. A Page 1 of 2 s Electrical Characteristic Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO -100 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage (w/ Real Device Limit) BVCER -100 - - V IC=-1µA, RB=1KΩ Collector-Emitter Breakdown Voltage *BVCEO -60 - - V IC=-100mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-100µA, IC=0 Collector-Base Cutoff Current ICBO - - -50 nA VCB=-80V, IE=0 Collector-Base Cutoff Current (w/ Real Device Limit) ICER - - -50 nA VCB=-80V, R=1KΩ Emitter-Base Cutoff Current IEBO - - -10 nA VEB=-6V, IC=0 Collector Saturation Voltage 1 *VCE(sat)1 - -20 -50 mV IC=-100mA, IB=-10mA Collector Saturation Voltage 2 *VCE(sat)2 - -85 -140 mV IC=-1A, IB=-100mA Collector Saturation Voltage 3 *VCE(sat)3 - -155 -210 mV IC=-2A, IB=-200mA Collector Saturation Voltage 4 *VCE(sat)4 - -370 -460 mV IC=-5A, IB=-500mA Base Saturation Voltage *VBE(sat) - -1.08 -1.24 V IC=-5A, IB=-500mA Base-Emitter Voltage *VBE(on) - -0.935 -1.07 V VCE=-1V, IC=-5A DC Current Gain 1 *hFE1 100 200 - VCE=-1V, IC=-10mA DC Current Gain 2 *hFE2 100 200 300 VCE=-1V, IC=-2A DC Current Gain 3 *hFE3 75 90 - VCE=-1V, IC=-5A DC Current Gain 4 *hFE4 10 25 - VCE=-1V, IC=-10A Gain-Bandwidth Product fT - 120 - MH VCE=-10V, IC=-100mA, Output Capacitance Cob - 74 - pF VCB=-10V, IE=0, f=1MHz (TJ = 25OC unless otherwise noted) High Current Transistor B C E C SOT-223 0.30±0.03 12° 0.25 12° ±1° ±3° 6° R0.15 R0.15 ±1° 1 2 3 1. BASE １．６±０．２ Maxim Junction Temperature um Ratings and Thermal Characteristics Parameter Symbol Value Unit Collector-Emitter Voltage VCEO - 60 V Collector-Base Voltage VCBO - 100 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) IC - 5 Total Power Dissipation PD W 3.0 Storage Temperature Tstg -55 to +150 Notes: Device on alumina substrate. A A Collector Current (Pulse) IC -15 (TA = 25OC unless otherwise noted) - 2. COLLECTOR 3. EMITTER Tj +150 O O C C |
Similar Part No. - PZT159_15 |
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Similar Description - PZT159_15 |
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