 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IR2152 Datasheet(PDF) 5 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IR2152 Datasheet(HTML) 5 Page - International Rectifier |
|
|
5 / 6 page 
IR2152 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-197 Thickness of Gate Oxide 800Å Connections Material Poly Silicon First Width 5 µm Layer Spacing 6 µm Thickness 5000Å Material Al - Si - Cu (Si: 1.0%, Cu: 0.5%) Second Width 6 µm Layer Spacing 9 µm Thickness 20,000Å Contact Hole Dimension 5 µm X 5 µm Insulation Layer Material PSG (SiO2) Thickness 1.7 µm Passivation Material PSG (SiO2) Thickness 1.7 µm Method of Saw Full Cut Method of Die Bond Ablebond 84 - 1 Wire Bond Method Thermo Sonic Material Au (1.0 mil / 1.3 mil) Leadframe Material Cu Die Area Ag Lead Plating Pb : Sn (37 : 63) Package Types 8 Lead PDIP / SO-8 Materials EME6300 / MP150 / MP190 Remarks: Device Information Process & Design Rule HVDCMOS 4.0 µm Transistor Count 231 Die Size 68 X 101 X 26 (mil) Die Outline To Order Next Data Sheet Index Previous Datasheet |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
