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3N161 Datasheet(PDF) 1 Page - Calogic, LLC

Part # 3N161
Description  Diode Protected P-Channel Enhancement Mode MOSFET
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Manufacturer  CALOGIC [Calogic, LLC]
Direct Link  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

3N161 Datasheet(HTML) 1 Page - Calogic, LLC

  3N161_15 Datasheet HTML 1Page - Calogic, LLC  
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Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N161
FEATURES
•• Channel Cut Off With Zero Gate Voltage
•• Square-Law Transfer Characteristic Reduces Distortion
•• Independent Substrate Connection Provides Flexibility
In Biasing
•• Internally Connected Diode Protects Gate From
Damage Due to Overvoltage
ABSOLUTE MAXIMUM RATINGS
(TA = 25
oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage . . . . . . . . . . . . . . . . . 40V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55
oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
3N161
Hermetic TO-72
-55
oC to +150oC
X3N161
Sorted Chips in Carriers
-55
oC to +150oC
LLC
PIN CONFIGURATION
TO-72
G
D
C
S
1507Z
ELECTRICAL CHARACTERISTICS (TA = 25
oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN MAX
UNITS
TEST CONDITIONS
IGSSF
Forward Gate-Terminal Current
-100
pA
VGS = -25V, VDS = 0
-10
nA
TA = +100
oC
BVGSS
Forward Gate-Source Breakdown Voltage
-25
V
IG = -0.1mA, VDS = 0
IDSS
Zero-Gate-Voltage Drain Current
-10
nA
VDS = -15V, VGS = 0
-10
µA
VDS = -25V, VGS = 0
VGS(th)
Gate-Source Threshold Voltage
-1.5
-5
V
VDS = -15V, ID = -10
µA
VGS
Gate-Source Voltage
-4.5
-8
VDS = -15V, ID = -8mA
ID(on)
On-State Drain Current (Note 2)
-40
-120
mA
VDS = -15V, VGS = -15V
| yfs |
Small-Signal Common-Source Forward Transfer Admittance
3500 6500
µS
VDS = -15V,
ID = -8mA
f = 1kHz
| yos |
Small-Signal Common-Source Output Admittance
250
Ciss
Common-Source Short-Circuit Input Capacitance (Note 1)
10
pF
f = 1MHz
Crss
Common-Source Short-Circuit Reverse Transfer Capacitance (Note 1)
4
NOTES: 1. For design reference only, not 100% tested.
2. Pulse test duration 300
µs; duty cycle ≤3%.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS016


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