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IR2101 Datasheet(PDF) 5 Page - International Rectifier

Part No. IR2101
Description  HIGH AND LOW SIDE DRIVER
Download  6 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR2101 Datasheet(HTML) 5 Page - International Rectifier

  IR2101 Datasheet HTML 1Page - International Rectifier IR2101 Datasheet HTML 2Page - International Rectifier IR2101 Datasheet HTML 3Page - International Rectifier IR2101 Datasheet HTML 4Page - International Rectifier IR2101 Datasheet HTML 5Page - International Rectifier IR2101 Datasheet HTML 6Page - International Rectifier  
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IR2101
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-5
Thickness of Gate Oxide
800Å
Connections
Material
Poly Silicon
First
Width
4 µm
Layer
Spacing
6 µm
Thickness
5000Å
Material
Al - Si (Si: 1.0% ±0.1%)
Second
Width
6 µm
Layer
Spacing
9 µm
Thickness
20,000Å
Contact Hole Dimension
5 µm X 5 µm
Insulation Layer
Material
PSG (SiO2)
Thickness
1.5 µm
Passivation
Material
PSG (SiO2)
Thickness
1.5 µm
Method of Saw
Full Cut
Method of Die Bond
Ablebond 84 - 1
Wire Bond
Method
Thermo Sonic
Material
Au (1.0 mil / 1.3 mil)
Leadframe
Material
Cu
Die Area
Ag
Lead Plating
Pb : Sn (37 : 63)
Package
Types
8 Lead PDIP / SO-8
Materials
EME6300 / MP150 / MP190
Remarks:
Device Information
Process & Design Rule
HVDCMOS 4.0 µm
Transistor Count
168
Die Size
67 X 91 X 26 (mil)
Die Outline
To Order
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