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RJH60V2BDPP-M0 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # RJH60V2BDPP-M0
Description  600V - 12A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60V2BDPP-M0 Datasheet(HTML) 6 Page - Renesas Technology Corp

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RJH60V2BDPP-M0
Preliminary
R07DS0760EJ0100 Rev.1.00
Page 6 of 9
May 25, 2012
50
40
30
20
10
0
1
10
100
10000
1000
0100
50150
200
250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
10
20
30
40
50
VGE
VCE
VGE = 0 V
f = 1 MHz
Ta = 25°C
Collector to Emitter Voltage VCE (V)
VCC = 300 V
IC = 12 A
Tc = 25°C
Diode Current Slope diF/dt (A/
μs)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope diF/dt (A/
μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope diF /dt (A/
μs)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
8
4
16
12
0
0
40
80200
120
160
VCC = 300 V
IF = 17 A
Tc = 150°C
25°C
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
012
4
3
Tc = 150°C
25°C
VGE = 0 V
Pulse Test
100
50
300
250
200
150
0
0
40
80200
120
160
Tc = 150°C
25°C
VCC = 300 V
IF = 17 A
0.20
0.16
0.12
0.08
0.04
0
40
80200
120
160
0
Tc = 150°C
25°C
VCC = 300 V
IF = 17 A


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