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CPU165MM Datasheet(PDF) 2 Page - International Rectifier

Part No. CPU165MM
Description  IGBT SIP MODULE Short Circuit Rated Fast IGBT
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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CPU165MM Datasheet(HTML) 2 Page - International Rectifier

   
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C-408
CPU165MM
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp.Coeff. of Breakdown Voltage
0.62
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.8
2.0
IC = 35A
VGE = 15V
2.3
V
IC = 60A
2.0
IC = 35A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
5.5
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-14
mV/°C
VCE = VGE, IC = 250µA
gfe
Forward Transconductance
11
20
S
VCE = 100V, IC = 35A
ICES
Zero Gate Voltage Collector Current
250
µA
VGE = 0V, VCE = 600V
6500
VGE = 0V, VCE = 600V, T J = 150°C
VFM
Diode Forward Voltage Drop
1.3
1.7
V
IC = 25A
1.2
1.5
IC = 25A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±500
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
120
180
IC = 35A
Qge
Gate - Emitter Charge (turn-on)
25
38
nC
VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
40
60
td(on)
Turn-On Delay Time
78
TJ = 25°C
tr
Rise Time
110
ns
IC = 35A, VCC = 480V
td(off)
Turn-Off Delay Time
340
510
VGE = 15V, RG = 5.0Ω
tf
Fall Time
265
400
Energy losses include "tail" and
Eon
Turn-On Switching Loss
2.1
diode reverse recovery.
Eoff
Turn-Off Switching Loss
4.0
mJ
Ets
Total Switching Loss
6.1
9.5
tsc
Short Circuit Withstand Time
10
µs
VCC = 360V, T J = 125°C
VGE = 15V, RG = 5.0Ω, VCPK < 500V
td(on)
Turn-On Delay Time
80
TJ = 150°C,
tr
Rise Time
110
ns
IC = 35A, VCC = 480V
td(off)
Turn-Off Delay Time
610
VGE = 15V, RG = 5.0Ω
tf
Fall Time
440
Energy losses include "tail" and
Ets
Total Switching Loss
9.4
mJ
diode reverse recovery.
Cies
Input Capacitance
2900
VGE = 0V
Coes
Output Capacitance
230
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
30
ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
50
75
ns
TJ = 25°C
105
160
TJ = 125°C
IF = 25A
Irr
Diode Peak Reverse Recovery Current
4.5
10
A
TJ = 25°C
8.0
15
TJ = 125°C
VR = 200V
Qrr
Diode Reverse Recovery Charge
112
375
nC
TJ = 25°C
420
1200
TJ = 125°C
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
250
A/µs
TJ = 25°C
During tb
160
TJ = 125°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
Pulse width 5.0µs,
single shot.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω.
Pulse width
≤ 80µs; duty factor ≤ 0.1%.
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Refer to Section D for the following:
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
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