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CPU165MM Datasheet(PDF) 1 Page - International Rectifier

Part No. CPU165MM
Description  IGBT SIP MODULE Short Circuit Rated Fast IGBT
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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CPU165MM Datasheet(HTML) 1 Page - International Rectifier

   
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C-407
CPU165MM
Short Circuit Rated Fast IGBT
IGBT SIP MODULE
Parameter
Typ.
Max.
Units
RθJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
1.5
RθJC (DIODE)
Junction-to-Case, each diode, one diode in conduction
2.0
°C/W
RθCS (MODULE)
Case-to-Sink, flat, greased surface
0.1
Wt
Weight of module
20 (0.7)
g (oz)
Thermal Resistance
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz).
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
Preliminary Data Sheet PD - 5.030
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Description
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
42
IC @ TC = 100°C
Continuous Collector Current, each IGBT
23
ICM
Pulsed Collector Current
120
A
ILM
Clamped Inductive Load Current
120
IF @ TC = 100°C
Diode Continuous Forward Current
15
IFM
Diode Maximum Forward Current
120
tsc
Short Circuit Withstand Time
10
µs
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL
Isolation Voltage, any terminal to case, 1 minute
2500
VRMS
PD @ TC = 25°C
Maximum Power Dissipation, each IGBT
83
W
PD @ TC = 100°C
Maximum Power Dissipation, each IGBT
33
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
5-7 lbf•in (0.55 - 0.8 N•m)
1,2
4
5
9
6,7
11,12
Q1
Q2
D1
D2
IMS-1
Revision 2
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