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1N4448WS-V Datasheet(PDF) 1 Page - SUNMATE electronic Co., LTD

Part No. 1N4448WS-V
Description  150mA Surface Mount Small Signal Fast Switching Diode
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Maker  SUNMATE [SUNMATE electronic Co., LTD]
Homepage  http://www.sunmate.tw/
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1N4448WS-V Datasheet(HTML) 1 Page - SUNMATE electronic Co., LTD

   
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Features
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Mechanical Data
·
·
·
K
L
M
J
C
H
BA
SOD-323
Dim
Min
Max
A
0.25
0.35
B
1.20
1.40
C
2.30
2.70
H
1.60
1.80
J
0.00
0.10
K
1.0
1.1
L
0.20
0.40
M
0.10
0.15
α
All Dimensions in mm
Case: SOD323 plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
·
·
·
·
· Component in accordance to RoHS 2002/95/EC
Lead (Pb)-free component
Fast switching diodes
Silicon epitaxial planar diode
These diodes are also available in other
case styles including the DO35 case
and WEEE 2002/96/EC
Note:
1) Valid provided that electrodes are kept at ambient temperature.
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
75
V
Repetitive peak reverse voltage
VRRM
100
V
Average rectified current half
wave rectification with resistive
load
f
≥ 50 Hz
IF(AV)
1501)
mA
Surge forward current
t < 1 s and Tj = 25 °C
IFSM
350
mA
Power dissipation
Ptot
2001)
mW
150mA Surface Mount Small Signal Fast Switching Diode
with the type designation 1N4448, the
MiniMELF case with the type designa-
tion LL4448, and the SOT23 case with the type
designation IMBD4448-V
1N4448WS-V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 5 mA
VF
620
720
mV
IF = 100 mA
VF
1000
mV
Leakage current
VR = 20 V
IR
25
nA
VR = 75 V
IR
5µA
VR = 20 V, Tj = 150 °C
IR
50
µA
Diode capacitance
VF = VR = 0 V
CD
4pF
Reverse recovery time
IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100 Ω
trr
4ns
Rectification efficiency
f = 100 MHz, VRF = 2 V
ην
0.45


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