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RLP03N06CLE Datasheet(PDF) 9 Page - Intersil Corporation |
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RLP03N06CLE Datasheet(HTML) 9 Page - Intersil Corporation |
9 / 9 page 6-426 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com PSPICE Electrical Model SUBCKT RLD03N06CLE 2 1 3; rev 4/18/94 CA 12 8 0.547e-9 CB 15 14 0.547e-9 CIN 6 8 0.301e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 20 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 2.96e-9 LSOURCE 3 7 2.96e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 QCONTROL 20 70 7 QMOD 1 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1.123 RGATE 9 20 3200 RIN 6 8 1e9 RSOURCE1 8 70 RDSMOD 1.12 RSOURCE2 70 7 RSMOD 2.16 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.22 .MODEL DBDMOD D (IS = 7.97e-17 RS = 1.82 TRS1 = 3.91e-3 TRS2 = 1.24e-5 CJO = 3.00e-10 TT = 1.83e-7) .MODEL DBKMOD D (RS = 3150 TRS1 =0 TRS2 = 0) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 74.2e-12 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.67 KP = 3.40 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL QMOD NPN (BF =5) .MODEL RBKMOD RES (TC1 = 4e-4 TC2 = 1.13e-8) .MODEL RDSMOD RES (TC1 = 6.80e-3 TC2 = 6.5e-6) .MODEL RSMOD RES (TC1 = 2.95e-3 TC2 = -1e-6) .MODEL RVTOMOD RES (TC1 = -2.22e-3 TC2 = -1.95e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF = -1) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF = -3) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.85 VOFF = 2.15) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.15 VOFF = -2.85) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991. 1 GATE LGATE RGATE EVTO 18 8 9 + DESD1 DESD2 12 13 8 14 13 13 15 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 RDRAIN DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE2 LSOURCE SOURCE RBREAK RVTO VBAT IT VTO ESG DPLCAP 6 6 8 10 5 16 21 11 17 18 8 - 14 5 8 6 8 7 3 17 18 19 91 2 + + + + + + RSOURCE1 70 RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE |
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