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NCE2301C Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE2301C Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE2301C Pb Free Product http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -2.6A RDS(ON) < 110mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch D G S Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2301C NCE2301C SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -2.6 A Drain Current -Pulsed (Note 1) IDM -13 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 138 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -12 - V Zero Gate Voltage Drain Current IDSS VDS=-12V,VGS=0V - - -1 μA |
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