Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

NCE20P09S

Pb Free Product

http://www.ncepower.com

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

-0.5

-0.7

-1.4

V

-

22

28

mΩ

Drain-Source On-State Resistance

32

40

mΩ

Forward Transconductance

-

17

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

2100

-

PF

Output Capacitance

-

498

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

300

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

25

-

nS

Turn-on Rise Time

-

30

-

nS

Turn-Off Delay Time

-

70

-

nS

Turn-Off Fall Time

-

50

-

nS

Total Gate Charge

-

17

-

nC

Gate-Source Charge

-

4.1

-

nC

Gate-Drain Charge

-

4.3

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production