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UPC805T Datasheet(PDF) 2 Page - NEC

Part No. UPC805T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPC805T Datasheet(HTML) 2 Page - NEC

   
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µPA805T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.1
µA
DC Current Gain
hFE
VCE = 3 V, IC = 5 mANote 1
75
150
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA, f = 2 GHz
12
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.3
0.5
pF
Insertion Power Gain
|S21|2
VCE = 3 V, IC = 5 mA, f = 2 GHz
7
8.5
dB
Noise Figure
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
2.5
4
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 5 mA
0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T82
hFE Value
75 to 150
TYPICAL CHARACTERISTICS (TA = 25
°C)
50
200
100
0
50
100
150
40
30
20
10
0
0.5
1
VCE = 3 V
Ambient Temperature TA (°C)
Base to Emitter Voltage VBE (V)
40
200
0.1
30
20
10
0
246
500 A
400 A
300 A
200 A
IB = 100 A
100
0
0.5
1
5
10
50 100
5 V
VCE = 3 V
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
Free Air
60 mW
120 mW
2 Elements in Total
Per Element
µ
µ
µ
µ
µ


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