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NCE0130 Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE0130 Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  NCE0130 Pb Free Product http://www.ncepower.com Wuxi NCE Power Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V (Typ:24 mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE0130 NCE0130 TO-220-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A ID (100℃) Drain Current-Continuous(TC=100℃) 21 A IDM Pulsed Drain Current 70 A PD Maximum Power Dissipation 75 W Derating factor 0.5 W/℃ EAS Single pulse avalanche energy (Note 5) 256 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃ |
Similar Part No. - NCE0130 |
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Similar Description - NCE0130 |
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