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RFP6P08 Datasheet(PDF) 2 Page - Intersil Corporation

Part No. RFP6P08
Description  -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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RFP6P08 Datasheet(HTML) 2 Page - Intersil Corporation

   
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2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
RFP6P08
RFP6P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
80
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
80
100
V
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
66
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
60
60
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.48
0.48
W/oC
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
RFP6P08
-80
-
-
V
RFP6P10
-100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 7)
-2
-
-4
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS
--
1
µA
VDS = 0.8 x Rated BVDSS (TC = 125
oC)
-
-
25
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 6A, VGS = -10V (Figures 5, 6)
-
-
0.6
Drain to Source On Voltage (Note 2)
VDS(ON)
ID = 6A, VGS = -10V
-
-
-3.6
V
Turn-On Delay Time
td(ON)
VDD = 50V, ID 6A
RG = 50Ω, RL = 16Ω
VGS = -10V
(Figures 13, 14)
-11
60
ns
Rise Time
tr
-
48
100
ns
Turn-Off Delay Time
td(OFF)
-
102
150
ns
Fall Time
tf
-
70
100
ns
Input Capacitance
CISS
VDS = 25V
VGS = 0V
f = 1MHz
(Figure 8)
-
-
800
pF
Output Capacitance
COSS
-
-
350
pF
Reverse-Transfer Capacitance
CRSS
-
-
150
pF
Thermal Resistance Junction to Case
RθJC
RFP6P08, RFP6P10
-
-
2.083
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -3A
-
-
-1.4
V
Reverse Recovery Time
trr
ISD = 4A, dlSD/dt = 50A/µs
-
150
-
ns
NOTES:
2. Pulse Test: Pulse Duration
≤ 300µs max, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP6P08, RFP6P10


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