RFP4N100 datasheet(3/6 Pages) INTERSIL

Part #	RFP4N100

Description	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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3 / 6 page

4-530

Typical Performance Curves TC = 25oC, Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

TA, AMBIENT TEMPERATURE (

oC)

0.0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

4.5

3.0

1.5

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (

oC)

4.0

1.0

0.5

3.5

2.5

2.0

110

100

1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

10

1

0.1

0.01

BY rDS(ON)

AREA MAY BE LIMITED

OPERATION IN THIS

RFP4N100, RF1S4N100SM

10

µs

100

µs

1ms

10ms

TC = 25

oC

TJ = MAX RATED

SINGLE PULSE

DC

0.01

0.10

1

10

tAV, TIME IN AVALANCHE (ms)

100

10

1

Idm

STARTING TJ = 25

oC

STARTING TJ = 150

oC

IF R = 0

tav = (L)(Ias) / (1.3 x RATED BVDSS - VDD)

IF R

≠ 0

tav = (L/R) In ((Ias x R) / (1.3 x RATED BVDSS - VDD) + 1)

0

100

200

300

400

500

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

8

6

4

2

0

VGS = 6V

VGS = 5V

VGS = 4V

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

1020304050

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

8

6

4

2

0

VGS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 6V

VGS = 5V

VGS = 4V

RFP4N100, RF1S4N100SM

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