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RFP2N10L Datasheet(PDF) 1 Page - Intersil Corporation |
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RFP2N10L Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 5 page 6-248 File Number 2872.2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP2N08L, RFP2N10L 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924. Features • 2A, 80V and 100V •rDS(ON) = 1.050Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB Ordering Information PART NUMBER PACKAGE BRAND RFP2N08L TO-220AB RFP2N08L RFP2N10L TO-220AB RFP2N10L NOTE: When ordering, include the entire part number. G D S GATE DRAIN (FLANGE) SOURCE DRAIN Data Sheet July 1999 |
Similar Part No. - RFP2N10L |
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Similar Description - RFP2N10L |
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