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RFP15N08L Datasheet(PDF) 2 Page - Intersil Corporation

Part No. RFP15N08L
Description  15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFP15N08L Datasheet(HTML) 2 Page - Intersil Corporation

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6-235
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
RFP15N08L
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
80
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
80
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±10V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
15
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
40
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
0.48
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
80
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1mA
1
-
2.5
V
Zero Gate Voltage Drain Current
IDSS
TC = 25
oC, V
DS = 65V, VGS = 0V
-
-
1
µA
TC = 125
oC, V
DS = 65V, VGS = 0V
-
-
50
µA
Gate to Source Leakage Current
IGSS
VGS = 10V, VDS = 0V
-
-
100
nA
Drain to Source On Voltage
VDS(ON)
ID = 7.5A, VGS = 5V
-
-
1.05
V
ID = 15A, VGS = 5V
-
-
3.0
V
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 7.5A, VGS = 5V
-
-
0.140
Forward Transconductance
V(plateau) VDS = 15V, ID = 15A
-
-
4.5
V
Turn-On Delay Time
td(ON)
VDD = 40V, ID = 7.5A, RGS = 6.25Ω,
VGS = 5V
-
-
40
ns
Rise Time
tr
-
-
325
ns
Turn-Off Delay Time
td(OFF)
-
-
325
ns
Fall Time
tf
-
-
325
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 0-10V
VDD = 64V,
ID = 15A,
RL = 4.27Ω
-
-
80
nC
Gate Charge at 5V
Qg(5)
VGS = 0-5V
-
-
45
nC
Threshold Gate Charge
Qg(TH)
VGS = 0-1V
-
-
3
nC
Thermal Resistance Junction to Case
RθJC
-
-
2.083
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 7.5A
-
-
1.4
V
Diode Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 100A/µs
-
225
-
ns
NOTES:
2. Pulsed: pulse duration =
≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RFP15N08L


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