5-2

Absolute Maximum Ratings

RFM7N35

RFM7N40

RFP7N35

RFP7N40

UNITS

350

400

350

400

V

350

400

350

400

V

77

7

7

A

15

15

15

15

A

±20

±20

±20

±20

V

100

100

75

75

W

0.8

0.8

0.6

0.6

-55 to 150

-55 to 150

-55 to 150

-55 to 150

Maximum Temperature for Soldering

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

RFM7N35, RFP7N35

350

-

-

V

RFM7N40, RFP7N40

400

-

-

V

Gate Threshold Voltage

2

-

4

V

Zero Gate Voltage Drain Current

-

1

µA

-

25

µA

Gate to Source Leakage Current

-

-

±100

nA

Drain to Source On Resistance (Note 2)

-

-

0.75

Ω

Drain to Source On Voltage (Note 2)

-

-

5.25

V

Turn-On Delay Time

(Figures 10, 11, 12)

-16

45

ns

Rise Time

-54

75

ns

Turn-Off Delay Time

-

170

250

ns

Fall Time

-

62

100

ns

Input Capacitance

(Figure 9)

-

-

1600

pF

Output Capacitance

-

-

300

pF

Reverse-Transfer Capacitance

-

-

200

pF

Thermal Resistance Junction to Case

RFM7N35, RFM7N40

-

-

1.25

RFP7N35, RFP7N40

-

-

1.67

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

-

-

1.4

V

Reverse Recovery Time

-

870

-

ns

NOTES:

2. Pulse Test: Pulse Width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

RFM7N35, RFM7N40, RFP7N35, RFP7N40