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RFP4N35 Datasheet(PDF) 2 Page - Intersil Corporation |
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RFP4N35 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 4 page 2 Absolute Maximum Ratings TC = 25 oC Unless Otherwise Specified RFM4N35 RFM4N40 RFP4N35 RFP4N40 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 350 400 350 400 V Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . VDGR 350 400 350 400 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 4444 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 8888 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 75 60 60 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ,TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .Tpkg 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 RFM4N40, RFP4N40 400 - - V RFM4N35, RFP4N35 350 - - V Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 250µA (Figure 8) 2 - 4 V Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS -- 1 µA VDS = 0.8 x Rated BVDSS, TC = 125 oC- - 25 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V (Figures 6, 7) - - 2.000 Ω Drain to Source On-Voltage (Note 2) VDS(ON) ID = 4A, VGS = 10V - - 8 V Turn-On Delay Time tD(ON) VDD = 200V, ID = 2A, RG = 50Ω RL = 100Ω, VGS = 10V (Figures 10, 11, 12) -12 45 ns Rise Time tr -42 60 ns Turn-Off Delay Time tD(OFF) - 130 200 ns Fall Time tf - 62 100 ns Input Capacitance CISS VDS = 25V, VGS = 0V f = 1MHz (Figure 9) - - 750 pF Output Capacitance COSS - - 150 pF Reverse-Transfer Capacitance CRSS - - 100 pF Thermal Resistance Junction to Case R θJC RFM4N35, RFM4N40 - - 1.67 oC/W RFP4N35, RFP4N40 - - 2.083 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 2A - - 1.4 V Reverse Recorvery Time trr ISD = 4A, dISD/dt = 100A/µs - 800 - ns NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. RFM4N35, RFM4N40, RFP4N35, RFP4N40 |
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