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RFG50N05L Datasheet(PDF) 2 Page - Intersil Corporation |
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RFG50N05L Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 6 page 6-213 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFG50N05L RFP50N05L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 50 50 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 50 130 50 130 A A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 ±10 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25 oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 0.88 110 0.88 W W/oC Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Refer to UIS SOA Curve - Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 9) 1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0 - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±10V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 50A, VGS = 5V (Figure 7) - - 0.022 Ω ID = 50A, VGS = 4V - - 0.027 Ω Turn-On Time t(ON) VGS = 5V, RGS = 2.5Ω, RL = 1Ω (Figures 12, 15, 16) - - 100 ns Turn-On Delay Time tD(ON) -15- ns Rise Time tr -50- ns Turn-Off Delay Time tD(OFF) -50- ns Fall Time tf -15- ns Turn-Off Time t(OFF) - - 100 ns Total Gate Charge QG(TOT) VGS = 0 to 10V VDD = 40V, ID = 50A RL = 0.8Ω (Figures 17, 18) - - 140 nC Gate Charge at 5V QG(5) VGS = 0 to 5V - - 80 nC Threshold Gate Charge QG(th)VGS = 0 to 1V - - 6 nC Thermal Resistance Junction to Case RθJC - - 1.14 oC/W Thermal Resistance Junction to Ambient RθJA -- 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 50A - - 1.5 V Diode Reverse Recovery Time trr ISD = 50A, dISD/dt = 100A/µs - - 1.25 ns NOTES: 2. Pulsed: pulse duration = 300 µs maximum, duty cycle = 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. RFG50N05L, RFP50N05L |
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