RFG50N05L datasheet(2/6 Pages) INTERSIL

Part #	RFG50N05L

Description	50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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6-213

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFG50N05L

RFP50N05L

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

50

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR

50

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

50

130

50

130

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Above TC = 25

oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

110

0.88

110

0.88

W

W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Refer to UIS SOA Curve

-

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 10)

50

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 9)

1

-

2

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0

-

25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V, VDS = 0V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 50A, VGS = 5V (Figure 7)

-

0.022

Ω

ID = 50A, VGS = 4V

-

0.027

Ω

Turn-On Time

t(ON)

VGS = 5V, RGS = 2.5Ω, RL = 1Ω

(Figures 12, 15, 16)

-

100

ns

Turn-On Delay Time

tD(ON)

-15-

ns

Rise Time

tr

-50-

ns

Turn-Off Delay Time

tD(OFF)

-50-

ns

Fall Time

tf

-15-

ns

Turn-Off Time

t(OFF)

-

100

ns

Total Gate Charge

QG(TOT)

VGS = 0 to 10V

VDD = 40V, ID = 50A

RL = 0.8Ω

(Figures 17, 18)

-

140

nC

Gate Charge at 5V

QG(5)

VGS = 0 to 5V

-

80

nC

Threshold Gate Charge

QG(th)VGS = 0 to 1V

-

6

nC

Thermal Resistance Junction to Case

RθJC

-

1.14

oC/W

Thermal Resistance Junction to Ambient

RθJA

--

80

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 50A

-

1.5

V

Diode Reverse Recovery Time

trr

ISD = 50A, dISD/dt = 100A/µs

-

1.25

ns

NOTES:

2. Pulsed: pulse duration = 300

µs maximum, duty cycle = 2%.

3. Repititive rating: pulse width limited by maximum junction temperature.

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