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RFG30P06 Datasheet(PDF) 1 Page - Intersil Corporation

Part # RFG30P06
Description  30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFG30P06 Datasheet(HTML) 1 Page - Intersil Corporation

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background image
4-133
File Number
2437.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
RFG30P06, RFP30P06, RF1S30P06SM
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Features
• 30A, 60V
•rDS(ON) = 0.065Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P06
TO-247
RFG30P06
RFP30P06
TO-220AB
RFP30P06
RF1S30P06SM
TO-263AB
F1S30P06
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999


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