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RQJ0203WGDQA Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RQJ0203WGDQA
Description  Silicon P Channel MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQJ0203WGDQA Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0292EJ0500 Rev.5.00
Page 1 of 7
Jan 10, 2014
Preliminary Datasheet
RQJ0203WGDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 142 m
Ω typ (V
GS = –4.5 V, ID = –1.1 A)
• Low drive current
• High speed switching
• 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Source
2. Gate
3. Drain
S
D
G
2
1
3
1
2
3
Note:
Marking is “WG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–20
V
Gate to source voltage
VGSS
+8 / –12
V
Drain current
ID
–2.1
A
Drain peak current
ID(pulse)
Note1
–6.0
A
Body - drain diode reverse drain current
IDR
–2.1
A
Channel dissipation
Pch
Note2
0.8
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0292EJ0500
Rev.5.00
Jan 10, 2014


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