RFD16N03LSM datasheet(4/8 Pages) INTERSIL

Part #	RFD16N03LSM

Description	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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4 / 8 page

6-159

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 10. SWITCHING TIME vs GATE RESISTANCE

FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

0.01

0.1

10

0.001

200

1

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R

≠ 0

tAV=(L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25

oC

STARTING TJ = 150

oC

100

1

100

0

25

0

1.0

2.0

3.0

5.0

50

75

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 10V

100

4.0

VGS = 5V

VGS = 4.5V

VGS = 3.5V

PULSE DURATION = 250

µs, TC = 25oC

VGS = 3V

0

3.0

4.5

6.0

7.5

1.5

0

25

50

75

175oC

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

100

25oC

VDD = 15V

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

25

50

75

2.5

3.0

3.5

VGS, GATE TO SOURCE VOLTAGE (V)

4.0

100

ID = 16A

ID = 8A

ID = 32A

ID = 2A

4.5

5.0

TJ = 25

oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

0

50

100

150

200

010

20

30

40

RGS, GATE TO SOURCE RESISTANCE (Ω)

50

250

tr

tf

td(ON)

td(OFF)

VDD = 15V, IDD = 16A, RL = 0.93Ω

0

0.5

1.0

1.5

2.0

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (

oC)

200

ID = 16A

VGS = 5V,

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX.

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