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RJK0655DPB Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0655DPB
Description  60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0655DPB Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK0655DPB
Preliminary
R07DS1053EJ0200 Rev.2.00
Page 3 of 6
Apr 09, 2013
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
80
60
40
20
0
50
100
150
200
VDS = 10 V
Pulse Test
VGS = 3.8 V
10
1
1
10
100
1000
300
240
180
120
60
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
100
VGS = 10 V
4.2 V
4.6 V
10 V
Pulse Test
0.1
1
10
100
10
100
1000
1
0.01
0.1
PW = 10 ms
DC Operation
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
5 A
4.4 V
Pulse Test
4.0 V
4.8 V


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