RJK0456DPB_15 datasheet(1/7 Pages) RENESAS

Part #	RJK0456DPB

Description	40V, 50A, 3.2m??max. Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS1051EJ0300 Rev.3.00

Page 1 of 6

Apr 09, 2013

Preliminary Datasheet

RJK0456DPB

40V, 50A, 3.2m

 max.

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Low drive current

 Low on-resistance

RDS(on) = 2.6 m typ. (at VGS = 10 V)

 Pb-free

 Halogen-free

 High density mounting

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

G

D

SSS

4

1 23

5

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

40

V

Gate to source voltage

VGSS

20

V

Drain current

ID

50

A

Drain peak current

ID(pulse)

Note1

200

A

Body-drain diode reverse drain current

IDR

50

A

Avalanche current

IAP

Note 2

50

A

Avalanche energy

EAS

Note 2

20

mJ

Channel dissipation

Pch

Note3

65

W

Channel to Case Thermal Resistance

ch-C

1.92

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at L=10uH, Tch = 25

C, Rg  50 

3. Tc = 25

C

R07DS1051EJ0300

(Previous: REJ03G1879-0200)

Rev.3.00

Apr 09, 2013

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