6-12

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

RFD12N06RLE, RFD12N06RLESM,

RFP12N06RLE

12A, 60V, 0.135 Ohm, N-Channel, Logic

Level, Power MOSFETs

These N-Channel logic level ESD protected power

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor drivers,

relay drivers, and emitter switches for bipolar transistors.

This performance is accomplished through a special gate

oxide design which provides full rated conductance at gate

biases in the 3V to 5V range, thereby facilitating true on-off

power control directly from logic circuit supply voltages.

Formerly developmental type TA09861.

Features

• 12A, 60V

• Electrostatic Discharge Protected

• UIS Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drive

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD12N06RLE

TO-251AA

12N6LE

RFD12N06RLESM

TO-252AA

12N6LE

RFP12N06RLE

TO-220AB

12N06RLE

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.

G

S

D

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

July 1999

File Number

2407.4

Data Sheet

[ /Title

(RFD1

2N06R

LE,

RFD12

N06RL

ESM,

RFP12

N06RL

E)

/Sub-

ject

(12A,

60V,

0.135

Ohm,

N-

Chan-

nel,

Logic

Level,

Power

MOS-

FETs)

/Autho

r ()

/Key-

words

(Inter-

sil

Corpo-

ration,

N-

Chan-

nel,

Logic

Level,

Power

MOS-