SURFACE MOUNT RECTIFIER GLASS P ASSIVATED

J UNCTION

VOLTAGE- 50 to 1000 Volts CURRENT - 2.0 Amperes

FE ATURES

Classification

94V-O

• Pb free product at available : 99% Sn above meet RoHS

environment

subst ance directive request

MECHAN ICAL D ATA

Method 2026

MAXIM UM RATINGS AND ELECTRICA L CH ARACTERISTI CS

Ratings at 25°C ambient temperature unless otherw i se specified. Single phase, half wave, 60 H z , resistive or inductive load.

For capacitive load, derate curr ent by 20%.

Maximum Recurrent Peak Reverse Voltage

V R R M

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

V R M S

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

V D C

50

100

200

400

600

800

1000

V

Maximum Average Forward Rectified Current,

at TL=75°C

I(AV)

2.0

A

Peak Forward Surge Current 8.3ms single half sine-wave

super imposed on rated load (J EDEC method)

IFSM

60.0

A

Maximum Instantaneous Forward Voltage at 2.0A

V F

1.1

V

Maximum DC Reverse Current TA=25°C

at Rated DC B lock ing Vol tage TA=125°C

IR

5.0

100

A

A

Maximum Reverse Recovery Time(Note 1) TJ=25°C

T R R

2.5

s

Typical Junction Capacitance (Note 2)

C J

12

P F

Maximum Therma l Resistance(Note 3)

RθJA

25

/W

Operating and Storage Temperature Range

TJ ,TSTG

- 55 tO +1 50

SMA/DO-214AC Unit:inch(mm)

.062(1.60)

.047(1.20)

.012(.305)

.006(.152)

.008(.203 )

.002(.051)

.060(1.52)

.030(0.76)

.181(4.60)

.157(4.00)

.208(5.28)

.188(4.80)

.114(2.90)

.098(2.50)

.096(2.44)

.078(2.00)

SEMICONDUCTOR

http://www.yeashin.com

1

REV.03 20150105

DATA SHEET

GS2A THRU GS2M

NOTES:

Reverse Recovery Test Condition s: IF=0.5A, IR=1.0A, I rr=0.25A

2. Measured at 1 MHz and applied Vr = 4.0 volts.

3. 8.0 mm2 ( .013mm thick ) land areas.

1.

µ

µ

µ

° C

° C

S Y M B OLS

G S2 A

G S2B

G S2D

G S2G

G S 2J

G S 2K

GS2 M

UNITS