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RF1K49088 Datasheet(PDF) 7 Page - Intersil Corporation

Part # RF1K49088
Description  3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET??Power MOSFET
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RF1K49088 Datasheet(HTML) 7 Page - Intersil Corporation

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
PSPICE Electrical Model
SUBCKT RF1K49088 2 1 3;
rev 7/21/94
CA 12 8 1.081e-9
CB 15 14 1.138e-9
CIN 6 8 0.673e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 34.1
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1.408e-3
RGATE 9 20 3.33
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 20e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.211
.MODEL DBDMOD D (IS = 2.82e-13 RS = 1.72e-2 TRS1 = 1.58e-3 TRS2 = 1.23e-7 CJO = 9.19e-10 TT = 2.03e-8)
.MODEL DBKMOD D (RS = 2.65e-1 TRS1 = 5.00e-3 TRS2 = 7.09e-5)
.MODEL DPLCAPMOD D (CJO = 0.42e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.01 KP = 15.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.02e-3 TC2 = -1.98e-6)
.MODEL RDSMOD RES (TC1 = 3.50e-3 TC2 = 3.70e-6)
.MODEL RVTOMOD RES (TC1 = -2.53e-3 TC2 = 8.13e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -3.8)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.8 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.4 VOFF= 4.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.1 VOFF= -1.4)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
10
DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
SOURCE
LSOURCE
DBODY
RBREAK
RVTO
VBAT
+
-
19
IT
RSOURCE
EBREAK
MOS2
EDS
EGS
RIN
CIN
VTO
ESG
S1A
S2A
S2B
S1B
CB
CA
EVTO
RGATE
GATE
LGATE
5
2
18
17
7
11
21
8
6
16
20
9
1
12
15
14
13
13
8
14
13
+
-
+
-
+
-
-
+
-
-
MOS1
3
6
8
5
8
18
8
6
8
17
18
RF1K49088


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