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RJH60M7DPQ-E0 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH60M7DPQ-E0 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 10 page  RJH60M7DPQ-E0 Preliminary R07DS1089EJ0200 Rev.2.00 Page 2 of 9 Jun 25,2013 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current / Diode reverse current ICES / IR — — 5 μA VCE = 600 V, VGE = 0 Gate to emitter leak current IGES — — ±1 μA VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 5 — 7 V VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) — 1.6 2.1 V IC = 50 A, VGE = 15 V Note3 VCE(sat) — 2.0 — V IC = 90 A, VGE = 15 V Note3 Input capacitance Cies — 3150 — pF VCE = 25 V VGE = 0 f = 1 MHz Output capacitance Coes — 200 — pF Reverse transfer capacitance Cres — 120 — pF Total gate charge Qg — 170 — nC VGE = 15 V VCE = 300 V IC = 50 A Gate to emitter charge Qge — 30 — nC Gate to collector charge Qgc — 90 — nC Turn-on delay time td(on) — 60 — ns VCC = 300 V VGE = 15 V IC = 50 A Rg = 5 Ω (Inductive load) Rise time tr — 70 — ns Turn-off delay time td(off) — 200 — ns Fall time tf — 45 — ns Turn-on energy Eon — 1.7 — mJ Turn-off energy Eoff — 1.2 — mJ Total switching energy Etotal — 2.9 — mJ Short circuit withstand time tsc 6 8 — μs Tc = 100 °C VCC ≤ 360 V, VGE = 15 V FRD forward voltage VF — 1.4 2.0 V IF = 50 A Note3 FRD reverse recovery time trr — 100 — ns IF = 50 A diF/dt = 100 A/ μs FRD reverse recovery charge Qrr — 0.27 — μC FRD peak reverse recovery current Irr — 5 — A Notes: 3. Pulse test |
Similar Part No. - RJH60M7DPQ-E0_15 |
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Similar Description - RJH60M7DPQ-E0_15 |
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