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BC847PN Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC847PN Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente BC847PN NPN - PNP Silicon Multi-Chip Transistor 20-Oct-2009 Rev. C Page 1 of 3 RoHS Compliant Product FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W (Temp. = 25˚C) Collector Current ICM : 0.1A Collector-base Voltage V(BR)CBO : 50/-50 V Operating & Storage Junction Temperature TJ, TSTG : -55˚C~+150˚C MARKING 7P ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C PARAMETER SYMBOL VALUE UNITS Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 6 V Collector Currrent – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage IC=10μA, IE=0 V(BR)CBO 50 V Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE=1μA, IC=0 V(BR)EBO 6 V Collector Cutoff Current VCB=30V, IE=0 ICBO 15 nA Emitter Cutoff Current VEB=5V, IC=0 IEBO 15 nA DC Current Gain VCE=5V, IC=2mA hFE 200 450 IC=10mA, IB=0.5mA VCE(sat) 0.25 V Collector-emitter Saturation Voltage IC=100mA, IB=5mA VCE(sat) 0.6 V IC=10mA, IB=0.5mA VBE(sat) 0.7 V Base-Emitter Saturation Voltage IC=100mA, IB=5mA VBE(sat) 0.9 V IC=10mA, VCE=5V VBE(On) 0.58 0.7 V Base-Emitter Voltage IC=10mA, VCE=5V VBE(On) 0.72 V Collector Output Capacitance VCB=10V, IE=0, f=1MHz Cob 6.0 pF Transition Frequency VCE=5V, IC=10mA, f=100MHz fT 100 MHz Noise Figure VCE=5V, IC=0.2mA, f=1kHz Rg=2KΩ, △f=200Hz NF 10 dB SOT-363 C1 B2 E2 E1 B1 C2 |
Similar Part No. - BC847PN_15 |
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Similar Description - BC847PN_15 |
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