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RJH60M3DPQ-E0 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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RJH60M3DPQ-E0 Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page RJH60M3DPQ-E0 Preliminary R07DS1086EJ0200 Rev.2.00 Page 6 of 9 Jun 13, 2013 010 30 20 70 40 60 50 20 10 50 40 30 0 Gate Charge Qg (nC) Diode Current Slope di/dt (A/ μs) Dynamic Input Characteristics (Typical) 800 600 400 200 0 16 12 8 4 0 VCC = 300 V IC = 17 A Tc = 25°C VGE VCE Typical Capacitance vs. Collector to Emitter Voltage Reverse Recovery Time vs. Diode Current Slope (Typical) Collector to Emitter Voltage VCE (V) 80 40 200 160 120 0 0 40 80 200 120 160 0 40 80 200 120 160 VCC = 300 V IF = 17 A Tc = 150°C 25°C Diode Current Slope di/dt (A/ μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Diode Current Slope di/dt (A/ μs) Reverse Recovery Charge vs. Diode Current Slope (Typical) 0.2 0.1 0.5 0.4 0.3 0 VCC = 300 V IF = 17 A Tc = 150°C 25°C 8 4 16 12 0 0 40 80 200 120 160 VCC = 300 V IF = 17 A Tc = 150°C 25°C 25°C C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) 0 0.4 0.8 1.2 1.6 2.0 2.4 VGE = 0 V Pulse Test Tc = 150°C 1 10 100 1000 1000 0 100 50 150 200 250 300 Cies Coes Cres VGE = 0 V f = 1 MHz Tc = 25°C |
Similar Part No. - RJH60M3DPQ-E0_15 |
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Similar Description - RJH60M3DPQ-E0_15 |
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