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RJF0408JPD Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJF0408JPD
Description  40V, 30A Silicon N Channel Thermal FET Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0408JPD Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJF0408JPD
Target Specifications
R07DS1133EJ0100 Rev.1.00
Page 3 of 7
Dec 12, 2013
Main Characteristics
50
40
30
20
10
0
0
50
100
150
200
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
100
10
1
0.1
0.01
0.1
1
10
100
DC Operation
(Tc = 25
°C)
PW = 10 ms
1 ms
Thermal shut down
Operation area
Operation in
this area is
limited by R
DS (on)
50
40
30
20
10
0
2
04
6
8
10
VGS = 3 V
8 V
6 V
4 V
10 V
Pulse Test
0
0
12
3
4
5
30
20
10
Tc = – 40
°C
25
°C
150
°C
VDS = 10 V
Pulse Test
800
400
500
600
700
300
200
100
0
2
04
6
8
10
5 A
10 A
ID = 15 A
Pulse Test
1000
0.1
1
10
100
100
10
1
VGS = 5 V
10 V
Pulse Test


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