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2SK3000 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3000 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3000 R07DS1134EJ0400 Rev.4.00 Page 4 of 7 Jan 10, 2014 5 2 1 0.2 0.5 0.1 0.1 0.2 0.5 1 2 10 10 5 25 °C Tc = –25 °C 75 °C Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current I (A) D Forward Transfer Admittance vs. Drain Current V = 10 V Pulse Test DS 04 8 12 16 20 200 500 100 10 20 50 5000 2000 500 1000 100 200 50 1 1 2 5 0.5 0.2 0.1 Ciss Coss Crss V = 0 f = 1 MHz GS 500 200 50 100 10 20 5 0.05 1 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 V = 0 GS 5 V 0.5 0.2 0.1 Drain to Source DiodeReverse Surge Destruction Characteristics 10 5 250 20 Ta = 25 °C 1 shot 10 V Surge Pulse Width PW (mS) 5 2 0.05 V = 4 V, V = 10 V PW = 5 μs, duty < 1 % GS DD t f d(on) t d(off) t r t Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Drain Current I (A) D Switching Characteristics Source to Drain Voltage V (V) SD Reverse Drain Current vs. Source to Drain Voltage Pulse Test 0.5 0.4 0.3 0.2 0.1 –40 0 40 80 120 160 0 ID = 0.45 A VGS = 4 V 10 V 0.45 A Pulse Test |
Similar Part No. - 2SK3000_15 |
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Similar Description - 2SK3000_15 |
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