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RMQCHA3636DGBA Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # RMQCHA3636DGBA
Description  36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RMQCHA3636DGBA Datasheet(HTML) 9 Page - Renesas Technology Corp

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RMQCHA3636DGBA, RMQCHA3618DGBA
Preliminary Datasheet
R10DS0240EJ0002 Rev.0.02
Page 9 of 29
Dec. 01, 2014
Power-up and Initialization Sequence
- VDD must be stable before K, /K clocks are applied.
- Recommended voltage application sequence : VSS → VDD → VDDQ & VREF → VIN. (0 V to VDD, VDDQ < 200 ms)
- Apply VREF after VDDQ or at the same time as VDDQ.
- Then execute either one of the following three sequences.
1. Single Clock Mode
- Drive /DOFF high (/DOFF can be tied high from the start).
- Then provide stable clocks (K, /K) for at least 20 us.
2. PLL Off Mode (/DOFF tied low)
- In the "NOP and setup stage", provide stable clocks (K, /K) for at least 20 us.
PLL Constraints
1.
These chips use the PLL. The clock input should have low phase jitter which is specified as tKC var.
2.
The lower end of the frequency at which the PLL can operate is 250 MHz.
(Please refer to AC Characteristics table for detail.)
3.
When the operating frequency is changed or /DOFF level is changed, setup cycles are required again.
Status
Power Up &
Unstable Stage
NOP &
Set-up Stage
Normal
Operation
V
DD
SET-UP Cycle
V
DDQ
V
REF
/DOFF
K, /K
Fix High (=Vddq)


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