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2SA2018F Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA2018F Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual RoHS Compliant Product 2SA2018F PNP Silicon General Purpose Transistor FEATURES Low VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mA B W MARKING CODE High Collector Current Dim Min Max A 1.50 1.70 B 0.78 0.82 C 0.80 0.82 D 0.28 0.32 G 0.90 1.10 H 0.00 0.10 J 0.10 0.20 K 0.35 0.41 L 0.49 0.51 S 1.50 1.70 All Dimension in mm SOT-523 S G D B L A 1 3 2 Top View H C J K Elektronische Bauelemente 1. Emitter Maximum Ratings (Ta=25 oC unless otherwise specified) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Continuous) Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg -15 V V V A W -12 -6 -0.5 IC 0.15 -55~+150 -55~+150 Symbol Limits Unit Electrical Characteristics (Tamb=25 o C unless otherwise specified) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Collector Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. -15 -12 -6 270 260 6.5 -0.1 -0.1 680 -0.25 VIC= -10 μ A, IE=0 IC= -1mA, IB=0 IE= -10 μ A, IC=0 VCB= -15V, IE=0 VEB= -6V, IC=0 VCE= -2V, IC=-10mA IC= -200mA, IB=-10mA VCE= -2V, IC=-10mA, f=100MHz VCB= -10V, IE=0, f=1MHz V V μ A μ A V MHz pF Typ. Max. Unit Conditions Transition frequency 01-Jun-2002 Rev. A Page 1 of 2 2. Base 3. Collector oC oC |
Similar Part No. - 2SA2018F_15 |
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Similar Description - 2SA2018F_15 |
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