H5N5005PL-E0-E_15 datasheet(2/7 Pages) RENESAS

Part #	H5N5005PL-E0-E

Description	500V - 60A - MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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H5N5005PL-E0-E

Preliminary

R07DS1199EJ0300 Rev.3.00

Page 2 of 6

Mar 25, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

500

—

V

ID = 10 mA, VGS = 0

Zero Gate voltage Drain current

IDSS

—

10

μA

VDS = 500 V, VGS = 0

Gate to Source leak current

IGSS

—

±0.1

μA

VGS = ±30 V, VDS = 0

Gate to Source cutoff voltage

VGS(off)

2.0

—

4.0

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

25

42

—

S

ID = 30 A, VDS = 10 V

Note4

Static Drain to Source on state

resistance

RDS(on)

—

0.070

0.085

Ω

ID = 30 A, VGS= 10 V

Note4

Input capacitance

Ciss

—

10550

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Output capacitance

Coss

—

1060

—

pF

Reverse transfer capacitance

Crss

—

180

—

pF

Turn-on delay time

td(on)

—

115

—

ns

ID= 30 A

VGS = 10 V

RL = 8.33

Ω

Rg = 10

Ω

Rise time

tr

—

380

—

ns

Turn-off delay time

td(off)

—

560

—

ns

Fall time

tf

—

300

—

ns

Total Gate charge

Qg

—

300

—

nC

VDD = 400 V

VGS = 10 V

ID = 60 A

Gate to Source charge

Qgs

—

40

—

nC

Gate to Drain charge

Qgd

—

155

—

nC

Body-Drain diode forward voltage

VDF

—

1.0

1.5

V

IF = 60 A, VGS = 0

Note4

Body-Drain diode reverse recovery

time

trr

—

220

—

ns

IF = 60 A, VGS = 0

diF/dt = 100A/

μs

Body-Drain diode reverse recovery

charge

Qrr

—

2.0

—

μC

Note: 4. Pulse test

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