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SI2335DS Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2335DS Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET SI2335DS (KI2335DS) ■ Features ● VDS (V) =-12V ● ID =-4.0A (VGS =-4.5V) ● RDS(ON) ＜ 51mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70mΩ (VGS =-2.5V) ● RDS(ON) ＜ 106mΩ (VGS =-1.8V) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Gate 2.Source 3.Drain 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 G S D 2 3 1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Ta = 25℃ -4.0 -3.2 Ta = 70℃ -3.3 -2.6 Pulsed Drain Current IDM Power Dissipation Ta = 25℃ 1.25 0.75 Ta = 70℃ 0.8 0.48 Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State Thermal Resistance.Junction- to-Foot RthJF Junction Temperature TJ Storage Temperature Range Tstg ℃ 100 166 50 150 -55 to 150 W RthJA -12 ± 8 ID V ℃ /W A -15 PD |
Similar Part No. - SI2335DS |
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Similar Description - SI2335DS |
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