4-107

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFF9220

-2.5A, -200V, 1.5 Ohm, P-Channel Power

MOSFETs

These are advanced power MOSFETs designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. They are P-Channel

enhancement mode silicon gate power field effect transistors

designed for applications such as switching regulators,

switching converters, motor drivers, relay drivers and drivers for

high power bipolar switching transistors requiring high speed

and low gate drive power. These types can be operated directly

from integrated circuits.

Formerly develpomental type TA17502.

Features

• -2.5A, -200V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Packaging

JEDEC TO-205AF

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFF9220

TO-205AF

IRFF9220

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

DRAIN

(CASE)

GATE

Data Sheet

July 1998

File Number

2288.2