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SI2303DS-3 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2303DS-3 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET SI2303DS (KI2303DS) ■ Features ● VDS (V) =-30V ● RDS(ON) ＜ 200mΩ (VGS =-10V) ● RDS(ON) ＜ 380mΩ (VGS =-4.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 Continuous Drain Current Ta = 25℃ -1.7 Ta = 70℃ -1.4 Pulsed Drain Current IDM -10 Power Dissipation Ta = 25℃ 1.25 Ta = 70℃ 0.8 Thermal Resistance.Junction- to-Ambient 100 (surface mounted on FR4 board) 166 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 ID PD W RthJA V ℃ /W A ℃ G S D 2 3 1 1. Gate 2. Source 3. Drain 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 *1 Surface Mounted on 1” x 1” FR4 Board. (TJ =150℃) *1 |
Similar Part No. - SI2303DS-3 |
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Similar Description - SI2303DS-3 |
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