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IRFD1Z0 Datasheet(PDF) 2 Page - Intersil Corporation

Part # IRFD1Z0
Description  0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFD1Z0 Datasheet(HTML) 2 Page - Intersil Corporation

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5-2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFD1Z0
IRFD1Z1
IRFD1Z2
IRFD1Z3
UNITS
Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
60
100
60
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .VDGR
100
60
100
60
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
0.5
0.5
0.4
0.4
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
4.0
4.0
3.2
3.2
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
1.0
1.0
1.0
1.0
W
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . .
0.008
0.008
0.008
0.008
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG -55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (See Figure 9)
IRFD1Z0, IRFD1Z2
100
-
-
V
IRFD1Z1, IRFD1Z3
60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TC = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(See Figure 6)
IRFD1Z0, IRFD1Z1
0.5
-
-
A
IRFD1Z2, IRFD1Z3
0.4
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 0.25A, VGS = 10V (See Figures 7, 8)
IRFD1Z0, IRFD1Z1
-
2.2
2.4
IRFD1Z2, IRFD1Z3
-
2.8
3.2
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.25A
0.25
0.35
-
S
Turn-On Delay Time
td(ON)
VDD ≅ 0.5 x Rated BVDSS, ID = 0.25A,
RG = 50Ω (Figures 14, 15, 16)
RL = 198Ω for BVDSS = 100V
RL = 118Ω for BVDSS = 60V
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
-10
20
ns
Rise Time
tr
-15
25
ns
Turn-Off Delay Time
td(OFF)
-15
25
ns
Fall Time
tf
-10
20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 1.2A, VDS = 0.8 x Rated BVDSS
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature
-
2.0
3.0
nC
Gate to Source Charge
Qgs
-
1.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
1.0
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 10)
-50
-
pF
Output Capacitance
COSS
-20
-
pF
Reverse Transfer Capacitance
CRSS
-5
-
pF
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3


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