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RJP1CS08DWT Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP1CS08DWT Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page R07DS0831EJ0300 Rev.3.00 Page 1 of 3 Oct 20, 2014 Datasheet RJP1CS08DWT / RJP1CS08DWA 1250V - 200A - IGBT Application: Inverter Features • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Tc = 25 °C) • High speed switching • Short circuit withstands time (10 μs min.) Outline 1. Gate 2. Collector (The back) 3. Emitter Die: RJP1CS08DWT-80 Wafer: RJP1CS08DWA-80 2 C 2 1 G E 3 1 3 3 3 3 Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Item Symbol Ratings Unit Collector to emitter voltage VCES 1250 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 400 A Tc = 100°C IC 200 A Junction temperature Tj 175 Note1 °C Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175 °C. IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175 °C. R07DS0831EJ0300 Rev.3.00 Oct 20, 2014 |
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