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IRF9230 Datasheet(PDF) 3 Page - Intersil Corporation

Part No. IRF9230
Description  -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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IRF9230 Datasheet(HTML) 3 Page - Intersil Corporation

   
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6-3
Input Capacitance
CISS
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
-
550
-
pF
Output Capacitance
COSS
-
170
-
pF
Reverse Transfer Capacitance
CRSS
-50
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
1.67
oC/W
Thermal Resistance
Junction to Ambient
RθJA
Typical Socket Mount
-
-
60
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
-6.5
A
Pulse Source to Drain Current
(Note 3)
ISDM
-
-
-26
A
Source to Drain Diode Voltage
(Note 2)
VSD
TC = 25
oC, I
SD = -6.5A, VGS = 0V,
(Figure 13)
-
-
-1.5
V
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = -6.5A, dISD/dt = 100A/µs
-
400
-
ns
Reverse Recovery Charge
QRR
TJ = 150
oC, I
SD = -6.5A, dISD/dt = 100A/µs
-
2.6
-
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25
oC, L = 17.75mH, R
G = 25Ω, peak IAS = 6.5A (Figures 15, 16).
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LS
LD
G
D
S
G
D
S
IRF9230, IRF9231, IRF9232, IRF9233


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