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IRF9230 Datasheet(PDF) 2 Page - Intersil Corporation

Part No. IRF9230
Description  -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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IRF9230 Datasheet(HTML) 2 Page - Intersil Corporation

   
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6-2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF9230
IRF9231
IRF9232
IRF9233
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS
-200
-150
-200
-150
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS
-200
-150
-200
-150
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-6.5
-4.0
-6.5
-4.0
-5.5
-3.5
-5.5
-3.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM
-26
-26
-22
-22
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD
75
75
75
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
0.6
0.6
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS
500
500
500
500
mJ
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to T
J = 125
oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V, (Figure10)
IRF9230, IRF9232
-200
-
-
V
IRF9231, IRF9233
-150
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2
-
-4
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TC = 125
oC
-
-
-250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V,
(Figure 7)
IRF9230, IRF9231
-6.5
-
-
A
IRF9232, IRF9233
-5.5
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = -3.5A, VGS = -10V, (Figures 8, 9)
IRF9230, IRF9231
-
0.5
0.8
IRF9232, IRF9233
-
0.8
1.2
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A,
(Figure 12)
2.2
3.5
-
S
Turn-On Delay Time
td(ON)
VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A,
RG = 50Ω, VGS = -10V, (Figure 17, 18)
RL = 14.7Ω for VDSS = 200V
RL = 10.9Ω for VDSS = 150V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-30
50
ns
Rise Time
tr
-
50
100
ns
Turn-Off Delay Time
td(OFF)
-
50
100
ns
Fall Time
tf
-40
80
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated
BVDSS, (Figures 14, 19, 20)
Gate Charge is Essentially Independent
of Operating Temperature
-31
45
nC
Gate to Source Charge
Qgs
-18
-
nC
Gate to Drain “Miller” Charge
Qgd
-13
-
nC
IRF9230, IRF9231, IRF9232, IRF9233


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