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AO6415 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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AO6415 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 4 page  SMD Type www.kexin.com.cn 2 MOSFET P-Channel MOSFET AO6415 (KO6415) ■ Electrical Characteristics Ta = 25℃ * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking DF** Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -20 Gate-Source breakdown voltage BVGSO VDS=0 V, IG=±250uA ±12 VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 Gate-Body leakage current IGSS VDS=0V, VGS=±12V ± 10 uA Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.5 -1.2 V VGS=-10V, ID=-3.3A 82 VGS=-10V, ID=-3.3A TJ=125℃ 115 VGS=-4.5V, ID=-2A 100 VGS=-2.5V, ID=-1A 140 On state drain current ID(ON) VGS=-4.5V, VDS=-5V -17 A Forward Transconductance gFS VDS=-5V, ID=-3.3A 8.6 S Input Capacitance Ciss 250 400 Output Capacitance Coss 40 85 Reverse Transfer Capacitance Crss 22 52 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 17 Ω Total Gate Charge Qg 3.2 4.5 Gate Source Charge Qgs 0.6 Gate Drain Charge Qgd 0.9 Turn-On DelayTime td(on) 11 Turn-On Rise Time tr 5.5 Turn-Off DelayTime td(off) 22 Turn-Off Fall Time tf 8 Body Diode Reverse Recovery Time trr 6.1 Body Diode Reverse Recovery Charge Qrr 1.4 nC Maximum Body-Diode Continuous Current IS -1.5 A Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V V pF nC IF=-2A, dI/dt=100A/μs ns VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2A Zero Gate Voltage Drain Current IDSS uA mΩ RDS(On) Static Drain-Source On-Resistance |
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