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AO4449 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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AO4449 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 5 page SMD Type www.kexin.com.cn 2 MOSFET P-Channel MOSFET AO4449 (KO4449) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1.3 -2.4 V VGS=-10V, ID=-7A 34 VGS=-10V, ID=-7A TJ=125℃ 38 VGS=-4.5V, ID=-5A 54 On state drain current ID(ON) VGS=-10V, VDS=-5V -40 A Forward Transconductance gFS VDS=-5V, ID=-7A 18 S Input Capacitance Ciss 760 Output Capacitance Coss 140 Reverse Transfer Capacitance Crss 95 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.5 5 Ω Total Gate Charge (10V) 13.6 16 Total Gate Charge (4.5V) 6.7 8 Gate Source Charge Qgs 2.5 Gate Drain Charge Qgd 3.2 Turn-On DelayTime td(on) 8 Turn-On Rise Time tr 6 Turn-Off DelayTime td(off) 17 Turn-Off Fall Time tf 5 Body Diode Reverse Recovery Time trr 15 Body Diode Reverse Recovery Charge Qrr 9.7 nC Maximum Body-Diode Continuous Current IS -3.5 A Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V VGS=-10V, VDS=-15V, ID=-7A pF nC Qg ns Zero Gate Voltage Drain Current IDSS uA mΩ VGS=-10V, VDS=-15V, RL=2.15Ω, RGEN=3Ω RDS(On) Static Drain-Source On-Resistance IF=-7A, dI/dt=100A/us VGS=0V, VDS=-15V, f=1MHz Note :The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking 4449 KC**** Marking |
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